_____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. MT2 is positive with respect to MTX in the first quadrant and it is negative in the third quad rant. %�쏢 6. Increase in V BB1 increases the value of peak and valley voltages. 0000014932 00000 n NV6530 SCR Characteristic Trainer 2. TRIAC Characteristics 93. Rectifiers (without and with filter) i) Half-wave Rectifier ii) Full-wave Rectifier 5. This may lead to damage of the UJT. It is a bidirectional device, means it can conduct current in both the directions. It has a pair of phase controlled SCRs connected in inverse parallel manner on the same chip. 7. TRIAC Characteristics 9 3. iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. Experiment procedure 1. T����T�x��$ 24. 2mm Patch cords. Press Esc to cancel. Power electronic trainer 2. Precautions: While performing the experiment do not exceed the ratings of the UJT. 20µA) by … Based on the experiment, there are four possible ways to trigger the TRIAC. A multimeter can be used to test the health of a triac. Please switch off the kit when not in use. Lab IV: Silicon Diode Characteristics – Page 2 3. TRANSIENT 6. To obtain V-I characteristics and to find on-state forward resistance of given SCR. where VMT21 and VGl are the voltages of terminal MT2 and gate with respect to terminal MT1.eval(ez_write_tag([[580,400],'circuitstoday_com-box-4','ezslot_2',110,'0','0'])); The device, when starts conduction permits a very heavy amount of current to flow through it. The triac can be operated with either positive or negative gate control voltage but in normal operation usually the gate voltage is positive in … 0000015657 00000 n Table 1. Expected graph: Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. 05-09 3 Controlled HWR and FWR using RC triggering circuit 10-14 4 UJT firing circuit for HWR and FWR circuits 15-20 5 Generation of firing signals for thyristors/ trials using digital circuits / microprocessor. 0000184919 00000 n 6.3.2 Graphical Analysis A graphical analysis of the BJT as both a switch and an amplifier can be obtained from the output I-V characteristics by means of a load-line construction. 0000491583 00000 n 2. Tabulation ��(�)0P�S�%�} 5 5.0 TRIAC TRIGGERING MODES 5.1 Create the TRIAC AC POWER CONTROL circuit block. 0000504293 00000 n This is expected because triac consists of two SCRs connected in parallel but opposite in … To analyze RC- … 0000491445 00000 n Output characteristics The base current I B is kept constant (eg. 0000000015 00000 n ~u-�l���[�~=�V��藰��������� ����o��O�^Y�{�x�Z��4������`�M���'x�r@(��� �9&�s8P9�jx4!|J���p4��9���0)���b>G��hB����a�N�s0L��#�V��'4L���V��'0L���V��'0L!��l=�ab=f�t=�a��B0L�^���@5@�`�; ��������R(�>4P �&���s:��ab��¤ԇ�� T� ��#�W�M}h�XOį:]O`�XOį:]O`�HOGį:[Oh�XOį:]O`�XOį:]O`����W��'4L��bӜ�'0Lt$�I�$�@ё��G�E0P��ħ9���01�caR>G�|���ф�9(��#bԜ��h����0 �Á">���hB�����s����2OTL.iaE�p����O�D��UH��i��bnnF�h�sa6��29s��`'s��"a��'g�o�|�n �b�Δq#�T�8a��$z��' The gate current can control the TRIAC for either direction of polarity. V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. c) Turn the bench regulating valve to the fully closed position. It can be triggered by reaching its breakover voltage (+ or -). The gate is the control terminal of the device. Characteristics of Uni Junction Transistor DIGITAL EXPERIMENTS (12) 6. RC Triggering Circuit – HWR & FWR 196. POWER ELECTRONICS LAB Department Of Electrical And Electronics Engineering ... Experiment- 1 1. �%d����f5�� Rheostat – Working, Construction, Types & Uses, RFID Reader and Tag – Ultimate Guide on RFID Module, Instantaneous on-state voltage – 1.5 Volts. A chart of the symbols used in the Lab IV. Zener Diode Characteristics i) V-I Characteristics ii) Zener Diode act as a Voltage Regulator 4. 6.3.2 illustrates the main characteristics of the triac. 0000491689 00000 n k*�-��)4PtF���(�@��H�#F4PB�l�Δ��)�P:(�t4P�(���@1���:O��( S:(�t8P�(��?��(�We�`z2E��3o�Fk�A�8SS��̳b�+��� APPARATUS REQUIRED: Trainer kit, Patch cards, Multimeters. Readings taken at 10 nm intervals are sufficient to outline an absorbance spectrum except perhaps at absorbance peaks where additional points may be required to characterize the curve more completely. Fig. Physics LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. >> This is expected because triac consists of two SCRs connected in parallel but opposite in direc tions. 0000015452 00000 n Set up the experiment according to circuit (figure. In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. �Sh�x�%��H�N��b� �O9�~p�j���*EP�'"=���D� �C�@Q�5��mU1hM�����)� �=�zy�Y�C�H��֍����T-+$�8$ ����}�F�)}U���2F&�o�����V+w-'iC`��[�+�5�I������Bk�VlT���x��u�q��l�ϸ�FB�Ml�V��c�y�vY�B]}qE�[�2��[M}EFfv �¬H]���,�e=,8#�xQ�VS�,��m�����u�}�����΁Ĵ�ي�e[��:���PV���}���S�D��b']�D���;�2W�O������;�a/qZx���%j#,E�Y�W�c}7e>�������ܳ��:����-�1�4C�ϓEM8��,�ٟkfWd1��EP�`A#�S�q��B����+2��2��=͌�{o"u;�7[x��� kzx���Po!aE�Vq��֭�~}5t���S��`�R Aq�|0P�����*T$����.����|:�Á"JGŔ�@P�(���@ ��>������)�P:(�t4P�(���@ ���>������4U�G���tM��bM��y�(�T ۥ���@��J[|ISp�XSl�eM����D4P���^�@uD�`��`Zf?4P�~`����@1����D����^���@1����C���#�_.`/�~p�XS���5��5��^YSh�HS��mhISp�XS l�eM��bM9�ŗ5���é`�/i It has similar characteristics to an SCR but it differs for it consists of a DIAC with a gate terminal. DATE NAME OF THE EXPERIMENT SIGNATURE REMARKS 1 Gate Pulse Generation using R, RC and UJT 2 Characteristics of SCR 3 Characteristics of Triac 4 Characteristics of MOSFET and IGBT 5 AC to DC half controlled converter 6 AC to DC fully controlled Converter 7 Step down and step up MOSFET based choppers 8 IGBT based single phase PWM inverter This list is not all-inclusive; however, it does contain the most commonly used symbols. %PDF-1.4 Two continuously variable overload & short circuit protected DC regulated power supplies of 0-3v for Gate Current and 0-30v for MT1 & MT2 are 5 R-C Triggering TRIAC Circuit Objectives: 1. Experiment 2: Characteristics of Two Pumps in Series a) Set up the hydraulics bench valves, as shown in Figure 10.9, to perform the two pumps in series test. APPARATUS REQUIRED: i. LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. Physics Page 1 of 8 EXPERIMENT: DIODE & ZENER DIODE Objective:- To study the forward and reverse bias characteristics of of ECE CREC 3 1. View ind module 1_4Q1920.pdf from ECEA 103 at Mapúa Institute of Technology. Circuit Diagram: Model Graph: Theory: An SCR is a device which can be turned on through the gate pulse and turned off using power circuit i.e., turn on is controlled but turn off is uncontrolled in an SCR. In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. Power Electronics Lab 2010 TABLE OF CONTENTS Experiment # Particulars Page # 1 Static characteristics of SCR or DIAC. Two DC power p-n . �(�t�KgJ%��J~u�)�P:�HL顁�����bJ�%?�U;(�t8P �(�cN�$�����. �4���.qE�T��C+�8r\U�u�������b�O�DHCJ�P��j�eI���qŴB� !��aC�&nY�qG1�*pl��*�%φ%�����@}5e>����h�ӛKf.\�ѹ=~��"Sa�v��q�̕ ; V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. Phone : 0120-2323854-58 2 | DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING, The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. VI CHARACTERISTICS OF MOSFET 14 4. and determine the Break over voltage, on state resistance Holding current. 0000015249 00000 n The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. MOSFET Characteristics 154. 0000014974 00000 n 10. Measure the voltage across R6 and across the triac, respectively. Experiment 5 Registration No. 4. 0000000973 00000 n Figure 6.3b. 8.2. ��(�)0Pr�#��q@�O��b�B�>�J|���$�O���%>J|*��$�O���%>J|ʁ�$�O���%>J�^^�^[��>��} The experiment is repeated with V CE kept constant say 2V, 3V, 4V etc. Lab 3 Appendices: Data sheets and Curve Tracer operation. and corresponding graphs are plotted. V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. 0000297166 00000 n <<8F8672D220EEB67CA04F4BA99C79657A>]/Prev 1071719>> The V-I characteristics for triac in the Ist and IIIrd quadrants are essentially identical to those of an SCR in the Ist quadrant. The readings indicate the corresponding Voltage Division (volt/div) and the Zero Point positions of the channels. OVERVIEW During the course of this experiment we will determine a number of important device parameters of an n-channel enhancement mode MOSFET by analyzing a number of DC characteristics. Study of Characteristics of SCR, MOSFETs &IGBTs AIM: 1. 92 0 obj and corresponding graphs are plotted. �Sh�8�(Y|�@%@����,�`�d��X��u 0000017964 00000 n NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. Objective The objectives of this experiment are to: a) determine the characteristics of flow over a rectangular and a triangular weir, and b) determine the value of the discharge coefficient for both notches. q�q�ْ�����H[�:o�p;Z������%sKoK��!�zE�moq��lB�"�.k+�X芺%��a���5� It has similar characteristics to an SCR but it differs for it consists of a DIAC with a gate terminal. 0 Two AVO meter 4. endobj P-N JUNCTION DIODE CHARACTERISTICS AIM: 1.To plot Volt-Ampere Characteristics of Germanium and Silicon P-N Junction The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. ��H>��} Lab X: I-V Characteristics of Metal-Oxide-Semiconductor Field Effect Transisitors (MOSFETs) – Page 6 Experimentally, the channel conductance in the linear region is measured by holding VDS to a value of 50 mV to ensure linear operation. ... like a triac without gate terminal, as shown in figure. Characteristics of Triac Typical V-I characteristics of a triac are shown in figure. endobj Aim: To study the V-I characteristics of SCR. CIRCUITS LABORATORY EXPERIMENT 6 TRANSISTOR CHARACTERISTICS 6.1 ABSTRACT In this experiment, the output I-V characteristic curves, the small-signal low frequency equivalent circuit parameters, and the switching IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 6 Experiment No: 3 TRIAC Characteristics AIM: To study the V-I characteristics of a TRIAC in both directions and also in iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. This is CE. Usually, a duration of 35 us is sufficient for sustaining the firing of the device. 93 0 obj Figure 9.3: Position of the notch and Vernier height gauge to set the datum. ☞Repeat from step 2 for another value of gate current IG. a��+�����F]]�5���3U�. xref Dual channel Oscilloscope 3. Now the collector voltage is increased by adjusting the rheostat Rh 2. To plot the input and transfer3. 3. BJT Characteristics (CE Configuration) i) Input Characteristics ii) Output Characteristics 6. VI Characteristics of PN Junction Diode 2. 16-19 4 20 AC- voltage controller by using TRIAC-DIAC combination.-22 5 UJT firing circuit for HWR & FWR. The base current I B is kept constant (eg. Refer figure 4.2. The circuits used in the gate for triggering the device are called the gate-triggering circuits. Characteristics of CE Transistor 4. Collect seven head and discharge readings for each weir. Lab #1 Establishing and Displaying Characteristics in AC Technology Due date: TBD Objective • Familiarization with the use of an oscilloscope and function generator. I will refrain from any form of academic dishonesty or deception, such as cheating or plagiarism. Apparatus 1. The first quadrant is the region wherein MT2 is positive w.r.t MT1 and vice- versa for the third quadrant. Type above and press Enter to search. Thank you. TRIAC Characteristics Typical V-I characteristics of a triac are shown in figure. P-N Junction Diode Characteristics 3. Repeat the above experiment for different values of VDS2 = 15V. Show your calculations for voltage with firing angle in reading 3 Show your calculations for voltage with firing angle in reading 7 Sketch the variation of output voltage with firing angle. Operating characteristics of triac in the 1st and 3rd quadrants are similar but for the direction of … Experiment- 1 1. This site is awsome. 0000432995 00000 n ��(�) ы�} V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. 94 0 obj 01-04 2 Static characteristics of MOSFET and IGBT. 21. EXPERIMENT 7:Observation of characteristics of a Zener diode Debangshu Mukherjee BS.c Physics,1st Year Chennai Mathematical Institute 7.11.2008 1 Aim of experiment In this experiment, we try to observe the relation between In this blog post , we can see VI Characteristics of TRIAC, this post contains circuit diagram and model graphs for VI Characteristics of TRIAC Procedure Experiment Steps Connections are made as shown in the circuit IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 1 Experiment No: 1 S.C.R. Power Electronics Lab Manual VII Sem EC EXPERIMENT-1(a) V-I CHARACTERISTICS OF SCR AIM: 1. Our webiste has thousands of circuits, projects and other information you that will find interesting. Power electronic trainer 2. 0000014910 00000 n Notice from the I-V characteristics that the output collector current is controlled by the input base current as modeled in Equation. b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. x��}ۮf�q��(��Ď���y>do%���`�(���=��H��H���J#R�����F.���I�~�t����$��?��Zݫ�����{��W��o݃���^�������;?�q5�����޹��MK�6FJ�}"R�$����U�~sԊ$) �6s�g-O��rt��:�q]�֊��*%��������7�n����K��VI}���K�kI�Z�c㱔�麯k� �5�$3��Ef��[˦V�MJF����c�q�+�$�h�=�5z���j ��`j�MI6�e�A�Iu�w�Y��w������h�.�k?k�X��[w��E[��]25?�jK�"�e-�5���}�i���0��f��>��ۚ/���vI%���Ҳ��RU��k��uI�����Z��nޛZm��.It-���֜UOmE�ot-s�ݘf-���0櫄f�g����Җ\�}튭��*�=��r��b��5�ܢ��sO#����$ײ0�� �>W}>�k��Ǭ�L��3��KIF,�b�|eG[�a�j����'�)���u[��b9G����˺Q��"%���b��g�"�]2�.�y��럽}z��AI����y��'7_x�������>|�敯��r���_�ʫ���/~�߸?�y�K���ꗆ�����W����Q���������ʿ��7�}��w��/�����y���o�O��'��?�}�5����c����w�7���y���-�ኯ�w��w��O�7���O���k�_}S)x�z��T���T���- r�?d� ��� q9&�r4L%�a�x�\�I�\�XQ01��ab.��$\���S���r,L��!Cab.�Dz�=Ba"=�ab=�ww�&�S�ڗ���0��J�ZsIOh�XOk�e=�a�wB0L�N���� �0u@�`ދX{X�=0L�{X����01�a����� ���01�aa��ļ��r�^.Xg,�{h�XO댅������ YO`�HO�b�aIOh�XO k�e=�ab=9�5�������Xk.� �)a���'0Lt���#�0�y�����D0L��k_�\����p9&�r0L�#�˱01�����N\����s9&�r4L�#��?����9f̌�%��B^��T�����,�`YC�&Z�� CIRCUIT DIAGRAM: Fig 1.1(a) Circuit diagram for VI characteristics of SCR. Do you know how RFID wallets work and how to make one yourself? _____ 5.3 Measure the voltage across R6. <> b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. LAB MANUAL ELECTRONIC DEVICES & CIRCUITS LAB Dept. Adjust +V A to 6.0 Vdc. & latching current 2. %%EOF SCR Characteristics 3 2. Theory:-A Semiconductor diode is prepared by joining P and N sections of a Fig. In this lab, you will study the I-V characteristics and small-signal model of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). 5. endobj 0000089174 00000 n Power Electronics Lab manual SSIT - 1 - CONTENTS Experiment No Page. to a value of 50 mV to ensure linear operation. This is repeated for increasing values of I B. 0000491768 00000 n Apparatus 1. 0000001315 00000 n 2. EC% 2 8 ELECTRONICS AND MICROPROCESSORS LAB L T P C 0 3 1 0 LIST OF EXPERIMENTS ELECTRONICS (;3(5,0(176 15 1. No 1. 0000503880 00000 n Its equivalent circuit is a pair of inverted four layer diodes. 0000241512 00000 n 6), connect the function generator and connect the oscilloscope to test points A and B. Dual channel Oscilloscope 3. CircuitsToday.com is an effort to provide free resources on electronics for electronic students and hobbyists. As already said in previous blog posts, the gate triggering may occur in any of the following four modes. *TRIAC’s have very small switching frequencies. The V-I characteristics for triac in the Ist and IIIrd quadrants are essentially identical to those of an SCR in the Ist quadrant. MOSFET Characteristics 15 4. TRIAC = TRI ode for A lternating C urrent. Apparatus:-Experimental kit and patch cords. Power Electronics Lab 2010 TABLE OF CONTENTS Experiment # Particulars Page # 1 Static characteristics of SCR or DIAC. IGBT Characteristics 17 5. Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. 2. Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. Two DC power supply Introduction A thyristor is a four-layer p-n-p-n semiconductor device consisting of three p-n junctions. 7-15 3 Controlled HWR & FWR using RCcircuit. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. EET120 Semiconductor Devices Experiment 1: Diode Characteristics By: Matthew Trump Online EET Department ECPI University I pledge to support the Honor System of ECPI. POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING 27, Knowledge Park-III, Greater Noida, (U.P.) 2. 1-6 2 Static characteristics of MOSFET & IGBT. Connect the circuit as shown in Figure 1.4. Apparatus Required: 1. VI Characteristics of Zener Diode 3. Experiment 2: Characteristics of Two Pumps in Series a) Set up the hydraulics bench valves, as shown in Figure 10.9, to perform the two pumps in series test. ?��t��s���FV1���Y[Z,��I���g2�NI|w��^w&��U��&ut�&ut�OW���E��Y�lQ>�Ѯ%����˧7��C�Oo��_���-�~��.�'���E���EӮ�#��GE����x��F�+V�-6魆�>��3I�GEN�]�� This large inrush of current must be restricted by employing external resist ance, otherwise the device may get damaged. 91 33 The V-I characteristics of a TRIAC is based on the terminal MT1 as the reference point. The sensitivity of TRIAC is greatest in I quadrant (mode 1) when MT2 and gate are positive with respect to MT 1 and it triggers for a … Characteristics of TRIAC The V-I characteristics of TRIAC are discussed below The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. �2�m�1�U��@�i�$�Y��ր ��4�� Characteristics AIM: To Test the V-I characteristics of S.C.R. eval(ez_write_tag([[300,250],'circuitstoday_com-medrectangle-3','ezslot_1',108,'0','0']));Typical V-I characteristics of a triac are shown in figure. Based on the experiment, there are four possible ways to trigger the TRIAC. 0000491551 00000 n To determine holding, latching current and break over voltage of given SCR. Lab 3 Appendices: Data sheets and Curve Tracer operation. Figure (2): RTD Characteristics Experiment. stream 91 0 obj Turn the Heater ON by pressing ON the Heater Switch on the screen (Heating Mode). k��-��)4P�������@����˚BE�*l�%M��bME�ŗ5��5��_�(�T�`�/i Start taking readings by pressing [Read] button over different temperature values. Sketch the VI characteristics of TRIAC. The family of curves obtained by plotting I C against V CE for each value of I B is called output characteristics. 0000299407 00000 n When is the sensitivity of TRIAC greatest? BACKGROUND INFORMATION 3.1 CHART OF SYMBOLS Here is a chart of symbols used in this lab. Operating characteristics of triac in the 1st and 3rd quadrants are similar but for the direction of flow of current and applied voltage. 4. 0000371364 00000 n startxref 0000015723 00000 n The corresponding collector current I C is noted. 0000239271 00000 n Experiment 5 Registration No. Is the triac conducting? 1 Thyristors DC Characteristics PREPARED BY: J.B. G. Ibarra 1.0 OBJECTIVES 1.1 To become 20µA) by adjusting the rheostat Rh 1. 7-15 3 Controlled HWR & FWR using RC Triggering circuit. It can be triggered by reaching its breakover voltage (+ or -). Testing triac using a multimeter. 01-04 2 Static characteristics of MOSFET and IGBT. Theory: An TRIAC is a device which can be turned on through the gate pulse for both positive and negative values of V VI CHARACTERISTICS OF IGBT 20 5. 3. ��(�)0P��� I am aware that as a member of the academic community it is my responsibility to turn in all suspected violators of the honor code. UJT Triggering of 3. 0000015518 00000 n Choose Experiment 2: “RTD Characteristics”. These triggering circuits usually generate trigger pulses for firing the device. 0000001089 00000 n RC 6.3.2 illustrates the main characteristics of the triac. To plot the characteristics of SCR and to find the forward resistance, holding current and ... readings for every 5V and enter the readings in the tabular column. 6. ��ju�٘�2&R��[��}�B�6�ٔ�=g���b﭅o��g�x�b0����(�n���s��D��v�fƝ3��3šG��0g�r��p\J3��cR�9P-�b�DU\��>�z��"(�)4P�Sh�ħ���>J| Inference: There is a negative resistance region from peak point to valley point. Physics Page 1 of 8 EXPERIMENT: DIODE & ZENER DIODE Objective:- To study the forward and reverse bias characteristics of diode and zener diode. Transistor characteristics: 1) Input characteristics Keeping the collector- emitter (V CE) voltage constant, the base- emitter (V BE) voltage is increased from 0 and the corresponding base current (I B) values are noted. By applying proper signal to the gate, the firing angle of the device can be controlled. Symbol Symbol Name Units E electric field V / cm Experiment No. V-I CHARACTERISTICS OF SCR AIM: To obtain V-I characteristics and to find on-state forward resistance of given SCR. ��X�v UlޔIȎ)��{0�uS,�r1����{�Ȓsur;r���E푅������lqLj��̝����F����K����UluQ� Q�����̧��Rw��T�g�>�i㴞��.���չ8�SZ�e{�ٌ#��0W�xQ����V1����5�k�Pg�q�����&�E�&B�i���Ԛ Two AVO meter 4. Inference: There is a negative resistance region from peak point to valley point. Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. Increase in V BB1 increases the value of peak and valley voltages. Output characteristics. The triac can be operated with either positive or negative gate control voltage but in normal operation usually the gate voltage is positive in … POWER ELECTRONICS LAB CHARACTERISTICS OF IGBT Experiment 1c Aim: To study the output and transfer characteristics of IGBT Apparatus: Trainers Kit Ammeter (0-200mA) Voltmeter (0-20V) Patch Chords Circuit Diagram: Procedure: Out-Put Characteristics 6) Connect the collector, emitter and the gate terminals to the characteristics circuit Sketch Characteristics of TRIAC ☞Now Switch on SPDT then note down the readings. EXPERIMENT TITLE MODULE NO. Study the front panel carefully and observe the buttons on the screen. /Contents 94 0 R ; V GT is a range of gate voltages that will trigger conduction. 0000015586 00000 n IGBT Characteristics 175. 2. <> 2) Output Characteristics. This is expected because triac consists of two SCRs connected in parallel but opposite in direc tions. _____ Figure 1.4: TRIAC DC Circuit 5.2 Momentarily press S1 (press and release). �$x����H7��d'JR�v�}F���'H$�H]'��B��"W�8�'�P5 �kV��iYXq��@?|ZY�]�ykob��}����k,�!p��9=�p� k*�-��)4P�)�����@��R[|ISp�XS l�eM��bMy�ŗ5��4��K��ŚJ`�/k A typical triac has the following voltage/current values: This information helped me in labs very much. 0000435236 00000 n NAME OF LABORATORY: Engg. (6.3). 1-6 2 Static characteristics of MOSFET & IGBT. ���%�} ☞Now vary VAK voltage slowly, correspondingly note down the VAK and IA readings and plot the graph. Note: If the connections are made wrong the kit may get damaged. Testing triac using a multimeter. To plot the characteristics of SCR and to find the forward resistance, holding current and latching current. The trigger pulse should be of sufficient magnitude and duration so that firing of the device is assured. VI CHARACTERISTICS OF TRIAC 8 3. Experiment No: 1 Experiment Name: Study of V- I Characteristics of SCR. Characteristics of JFET 5. You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set As���f�wS�f��)�]�1���m�ek Exp-2. <> You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set the base current on a specific value, and then varied V … 0000373605 00000 n POWER ELECTRONICS LAB, EED 3 ELECTRICAL ENGINEERING DEPARTMENT POWER ELECTRONICS LAB STATIC CHARACTERISTICS OF SCR Experiment 1a Aim: To Study the static characteristics of SCR Apparatus: SCR characteristic trainer kit �5��e ���Yއ�"f ���WC�&�we�޹-�dcku�ͥ%���u0Q�:�*��赯���%����5�����ҨYܮF��WԬn"Z�5��~����8 �^Kfg�+4;k�}ϒ���Y��>KE9��i -�튠%b[�W-f-k5e�"���%�i -�FҚ¶?�bi 2 �%�W4-� �%s�ѱdW�,�ꎢ坩�k1�XҐZr-!��z��c_�8��0ڶ�K�,��ZC�&��ۊ�5��Bk�!��ZC�+�� Study of Characteristics of SCR, MOSFETs &IGBTs AIM: 1. }U4s�œ}�f�jͅ]�{w��ﭛ�V����b^�5�dB}qȮ��D��d �Զ�W�j���_��㖵�@��A��Es��%M���hb���Wܵ�MD6Bm��ь�Hn���y\�߂�m����M�kWd��em�8qe�8�X`�rP�B:SX]3�tS��zAR/ Q�k?&H�o����O�e�ʷ���O}���BE.��" ���@yWAE@���(�$��B�#�霾���T�x�x���_4P���xD������_|�@���_0P������D!�/(Y|�@E@��; ���������N7?8Pd~h����:x����b�%�w@(��� �(6�#�C�n~p����@����|�C��J��i�(6?0Pb~��:���@����b�;"������ ������7?4Pl~`�����v����b���wDط���(1�bٝo~h����@����|�C�������(2?4Pb~DH;���@�����; ���������gN7?8P �c�c�D��8��C�(/*#�"�p$ ۡ�����)�bZ�f�w$��ŠQ�9d�)6�N�;����.�VG�T����-+���r[Qo�b�HVN�8VW�BtaUt�vY�x',tWm��M�4e���u��E°�c��UqG�0������5���`��H�B]Ul����,�_��mo�čI�r����g�6��E�����r4c�c�l�I[�L�gW,�u���!�����N��q(*�� 2.5V-45V 1.5V-AGMRCET DEPT OF E&C Tabular Column: V1 = V DS2 =15V or 12V V GS V I DS (mA) 0V 8V(Max) (b) Drain Characteristics… Repeat the experiment with the V-notch weir plate, but with 5 mm increments in water surface elevation. trailer 0000182678 00000 n Study of the characteristics of Triac AIM: To obtain the V-I characteristics of TRIAC for both forward and reverse biased conduction. <> Quadrant I operation     :     VMT2, positive; VG1 positive, Quadrant II operation    :     VMT21 positive;  VGl negative, eval(ez_write_tag([[336,280],'circuitstoday_com-medrectangle-4','ezslot_3',109,'0','0']));Quadrant III operation  :      VMT21 negative; VGl negative, Quadrant IV operation   :     VMT21 negative; VG1 positive. �N��Z���>r�91��0�*s����#m��bM��5��5(�(�T�i To plot the S. No. The TRIAC is 5 layer, 3 terminal Power semiconductor device. A multimeter can be used to test the health of a triac. T���X�ħ�K"�(�)0P�S`��'�`/��S`�ħ�@�O���oh*�K"�(�h�(����>*��*'@M ����%���^���@ ����CU5%���/6��b?4P�~p�R��=�O�:���Sh�d�J`���N���u The reading shows the setting of main time base (time/div). POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ... To study V-I characteristics of SCR and measure latching and holding currents. ... if provided for this experiment. By keeping the base current (I B) constant, collector- emitter (V CE) voltage is varied and the corresponding I C values are obtained. The experiment is repeated with V CE kept constant say 2V, 3V, 4V etc. 0000091415 00000 n The gate-triggering circuits for the triac are almost same like those used for SCRs. Record the readings. Either direction of polarity quad rant characteristics AIM: 1 experiment NAME: of. Current in both the directions typical triac has on and off state similar. 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The corresponding voltage Division ( volt/div ) and the Zero point positions of the notch and Vernier height gauge set... The family of curves obtained by plotting I C against V CE kept say. Versa for the triac AC Power control circuit block with I E on Y-axis experiment do exceed... Like those used for SCRs be restricted by employing external resist ance otherwise. ) input characteristics ii ) zener Diode characteristics I ) input characteristics ii ) Full-wave Rectifier 5 in any the! Both the directions triggering circuit kit may get damaged IA readings and plot the graph Tracer operation or plagiarism ance... Plot the characteristics of a typical triac has on and off state similar... The opposite direction in a crystal to both positive and negative voltages device can be used to test V-I... Study the front panel carefully and observe the buttons on the experiment, you the! Electrical Engineering, UET, Lahore study of characteristics of triac typical V-I characteristics ii ) Full-wave Rectifier.... In previous blog posts, the firing angle of the device are called the gate-triggering circuits for the triac tolerate... The maximum forward or reverse voltage that the triac is designed with two SCRs which are fabricated in the for... Momentarily press S1 ( press and release ) on SPDT then note down the VAK and IA readings and the... Health of a typical NPN Transistor-an MPSA20 semiconductor device I C against V CE kept (... Used symbols that the output collector current is controlled by the input base current I B as. Digital Experiments ( 12 ) 6 expected because triac consists of a DIAC with a gate terminal on off. And with filter ) I ) Half-wave Rectifier ii ) zener Diode characteristics – Page 2....: position of the thyristor off the kit may get damaged determine the break over of.

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